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NPN-Silizium-Fototransistor in SMT-Gehause mit Linse Silicon NPN Phototransistor in SMT-Package with lens SFH 3219
Wesentliche Merkmale * TOPLED mit Linse * Speziell geeignet fur Anwendungen im Bereich von 430 nm bis 1150 nm * Hohe Linearitat * Fur alle Lotverfahren geeignet * Gehausegleich mit SFH 4209, SFH 4219, SFH 4289 Anwendungen * Miniaturlichtschranken fur Gleich- und Wechsellichtbetrieb * Industrieelektronik * Messen/Steuern/Regeln" * Automobiltechnik * Sensorik Typ Type SFH 3219 Bestellnummer Ordering Code Q62702-P5551
Features * TOPLED with lens * Especially suitable for applications from 430 nm to 1150 nm * High linearity * Suitable for all soldering methods * Same package as SFH 4209, SFH 4219, SFH 4289 Applications * * * * * Miniature photointerrupters Industrial electronics For control and drive circuits Automotive technology Sensor technology
2001-11-22
1
SFH 3219
Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand fur Montage auf PC-Board Thermal resistance for mounting on pcb Symbol Symbol Wert Value - 40 ... + 100 35 15 75 165 450 Einheit Unit C V mA mA mW K/W
Top; Tstg VCE IC ICS Ptot RthJA
2001-11-22
2
SFH 3219
Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Flache ( 240 m) Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Halbwinkel Half angle Kapazitat, VCE = 0 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom Dark current VCE = 20 V, E = 0 Fotostrom Photo current Ee = 0.1 mW/cm2, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = 20 A Ee = 0.1 mW/cm2 Symbol Symbol S max Wert Value 990 430 ... 1150 Einheit Unit nm nm
A LxB LxW
0.045 0.45 x 0.45 25 5.0 1 ( 50)
mm2 mm x mm Grad deg. pF nA
CCE ICEO
IPCE
63
A
t r, t f
7
s
VCEsat
150
mV
2001-11-22
3
SFH 3219
Directional Characteristics Srel = f ()
40 30 20 10 0
OHF00006
1.0
50
0.8
0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0
2001-11-22
4
SFH 3219
Relative Spectral Sensitivity Srel = f ()
Srel
100 % 80 70
0.1
OHF00207
Photocurrent IPCE = f (VCE), Ee = Parameter
PCE
10 0 mA
OHF00007
Photocurrent IPCE /IPCE25 = f (TA), VCE = 5 V
PCE 25
1.4
0.4
mW cm 2 mW cm 2 mW cm 2
PCE
1.6
OHF01524
0.2
1.2 1.0 0.8 0.6 0.4 0.2
60 50 40 30 20 10 0 400 500 600 700 800 900
10
-2
10 -1
nm 1100
0
5
10
15
20
25
30 V 35 V CE
0 -25
0
25
50
75 C 100 TA
Total Power Dissipation Ptot = f (TA)
200 mW P tot 160
OHF00871
Capacitance CCE = f (VCE), f = 1 MHz, E = 0
5.0 C CE pF 4.0
OHF01528
Dark Current
ICEO = f (VCE), E = 0
CEO
10 1 nA
OHF01527
10 0
3.5
120
3.0 2.5
10 -1
80
2.0 1.5
10 -2
40
1.0 0.5
0
0
20
40
60
80 C 100 TA
0 10 -2
10 -1
10 0
10 1 V 10 2 V CE
10 -3
0
5
10
15
20
25
30 V 35 V CE
Dark Current
ICEO = f (TA), VCE = 5 V, E = 0
CEO
10 3 nA
OHF01530
10 2
10 1
10 0
10 -1 -25
0
25
50
75 C 100 TA
2001-11-22
5
SFH 3219
Mazeichnung Package Outlines
3.5 (0.138) max. 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 2.1 (0.083) 1 2.1 (0.083) 1.7 (0.067) 0.9 (0.035) 0.7 (0.028)
o2.60 (0.102) 1.1 (0.043) 0.5 (0.020)
0.6 (0.024) 0.4 (0.016) 0.1 (0.004) (typ.) 0.18 (0.007) 0.13 (0.005)
2 Package marking
GEOY6956
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Kathodenkennung: Cathode mark:
abgeschragte Ecke bevelled edge
2001-11-22
6
o2.55 (0.100)
3.4 (0.134) 3.0 (0.118)
3.7 (0.146) 3.3 (0.130)
SFH 3219
Lothinweise Soldering Conditions Bauform Types Tauch-, Schwall- und Schlepplotung Dip, Wave and Drag Soldering Lotbadtemperatur Maximal zulassige Lotzeit Max. Perm. Soldering Time 10 s Reflowlotung Reflow Soldering Lotzonentemperatur Maximale Durchlaufzeit
Temperature of the Soldering Bath TOPLED 260 C
Temperature of Soldering Zone 245 C
Max. Transit Time
10 s
Zusatzliche Informationen uber allgemeine Lotbedingungen erhalten Sie auf Anfrage. For additional information on general soldering conditions please contact us.
Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-11-22 7

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